Гетероструктуры на основе GaAs с квантовыми точками InAs для фотоэлектрических преобразователей
The possibility of obtaining efficient third-generation photovoltaic converters (PVCs) has been considered. Heterostructures based on GaAs with InAs quantum dots (QDs), formed during liquid-phase epitaxy by the method of pulsed cooling of a saturated solution in indium or tin melt, have been investi...
Збережено в:
| Дата: | 2008 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.32 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The possibility of obtaining efficient third-generation photovoltaic converters (PVCs) has been considered. Heterostructures based on GaAs with InAs quantum dots (QDs), formed during liquid-phase epitaxy by the method of pulsed cooling of a saturated solution in indium or tin melt, have been investigated. The characteristics of PVCs fabricated on heterostructures containing QDs in the region of the p–n junction were inferior to those of control converters produced on similar structures without QDs. Converters containing QDs in the p-region, however, were not inferior to the control devices and even demonstrated slightly better performance. |
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