Гетероструктуры на основе GaAs с квантовыми точками InAs для фотоэлектрических преобразователей
The possibility of obtaining efficient third-generation photovoltaic converters (PVCs) has been considered. Heterostructures based on GaAs with InAs quantum dots (QDs), formed during liquid-phase epitaxy by the method of pulsed cooling of a saturated solution in indium or tin melt, have been investi...
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| Datum: | 2008 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.32 |
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| Назва журналу: | Technology and design in electronic equipment |