Гетероструктуры на основе GaAs с квантовыми точками InAs для фотоэлектрических преобразователей

• Date: 2008
• Main Authors: Maronchuk, I. E., Dobrozhanskiy, Yu. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2008
• Subjects: фотоэлектрические преобразователи; квантовые точки; арсенид индия; арсенид галлия; жидкофазная эпитаксия
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.32
• Journal Title: Technology and design in electronic equipment

The possibility of obtaining efficient third-generation photovoltaic converters (PVCs) has been considered. Heterostructures based on GaAs with InAs quantum dots (QDs), formed during liquid-phase epitaxy by the method of pulsed cooling of a saturated solution in indium or tin melt, have been investi...