Исследование термометрических характеристик GaP-диодов p+–n-типа

• Date: 2008
• Main Authors: Krasnov, V. A., Shwarts, Yu. M., Shwarts, М. M., Kopko, D. P., Erohin, S. Yu., Fonkich, A. М., Shutov, S. V., Sypko, N. I.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2008
• Subjects: GaP; сенсор; температура; диод
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.38
• Journal Title: Technology and design in electronic equipment

The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determine...