Исследование термометрических характеристик GaP-диодов p+–n-типа

• Datum: 2008
• Hauptverfasser: Krasnov, V. A., Shwarts, Yu. M., Shwarts, М. M., Kopko, D. P., Erohin, S. Yu., Fonkich, A. М., Shutov, S. V., Sypko, N. I.
• Format: Artikel
• Sprache: Ukrainian
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2008
• Schlagworte: GaP; сенсор; температура; диод
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.38
• Назва журналу: Technology and design in electronic equipment

The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determine...