Предэпитаксиальная обработка подложек GaSb для жидкофазного выращивания гомоэпитаксиальных слоев
The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered. It is shown that application of two-stage chemical treatment in HNO3:HF:H2O=3:1:2 and H2O2:HF:H2O=4:1:15 etchants give a possibility to s...
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| Date: | 2008 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.6.41 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The results of investigation to find out the optimal conditions of pre-epitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered. It is shown that application of two-stage chemical treatment in HNO3:HF:H2O=3:1:2 and H2O2:HF:H2O=4:1:15 etchants give a possibility to satisfy the requirements for GaSb substrate in case of liquid phase epitaxy. Optimal conditions of pre-epitaxial GaSb substrate treatment provided the surface roughness value of no more than 0,05 mm and uniform substrate wetting by solution-melt are pointed out. |
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