Химическое осаждение из газовой фази гетеро- и наноструктур соединений III–V
The results of a phenomenological study based on the in-situ method of UV spectroscopy of the gas-phase composition in the source regions of GaAs, GaP, In, Ga, and In/Ga in a horizontal flow reactor are described. The experimental results are used to analyze the growth process of GaAs:Bi, GaAs1–хPх,...
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| Datum: | 2008 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.5.36 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The results of a phenomenological study based on the in-situ method of UV spectroscopy of the gas-phase composition in the source regions of GaAs, GaP, In, Ga, and In/Ga in a horizontal flow reactor are described. The experimental results are used to analyze the growth process of GaAs:Bi, GaAs1–хPх, In1–хGaхAs, InхGa1–хAsуP1–у layers by a low-temperature isothermal gas-transport chloride epitaxy method. The obtained data make it possible to determine the temperature and the range of carrier gas (H₂) flow rates required to form a supersaturated gas phase during low-temperature growth of hetero- and nanostructures based on GaAs, GaAs1–хPх, In1–хGaхAs, InхGa1–хAsуP1–у layers. |
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