Влияние исходных дефектов на распределение механических напряжений и деформаций при окислении кремния
Using modern methods, the complex structure of near-surface silicon layers in the “silicon — silicon dioxide” systems has been investigated. The dependencies of the parameters of these layers on oxidation conditions and the characteristics of the initial silicon have been identified. The influence o...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.5.62 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | Using modern methods, the complex structure of near-surface silicon layers in the “silicon — silicon dioxide” systems has been investigated. The dependencies of the parameters of these layers on oxidation conditions and the characteristics of the initial silicon have been identified. The influence of initial defects on the distribution of mechanical stresses and strains during silicon oxidation has been demonstrated. |
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