Влияние исходных дефектов на распределение механических напряжений и деформаций при окислении кремния
Using modern methods, the complex structure of near-surface silicon layers in the “silicon — silicon dioxide” systems has been investigated. The dependencies of the parameters of these layers on oxidation conditions and the characteristics of the initial silicon have been identified. The influence o...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.5.62 |
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| Назва журналу: | Technology and design in electronic equipment |