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Оптические сенсоры газов на основе полупроводниковых источников ИК-излучения

Various designs of optical gas sensors and gas analyzers based on them have been developed using low-power semiconductor infrared radiation sources operating in the wavelength range of 2.5–5.0 μm, fabricated on the basis of InGaAs/InAs and InAsSbP/InAs heterostructures. Experimental results are pres...

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Bibliographic Details
Date:2008
Main Author: Kabatsiy, V. N.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2008
Subjects:
по­лу­про­вод­ни­ко­вые ис­точ­ни­ки ИК-из­лу­че­ния
оп­ти­чес­кие сен­со­ры
га­зо­ана­ли­за­то­ры
при­бо­ры га­зо­во­го ана­ли­за
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.4.30
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:Various designs of optical gas sensors and gas analyzers based on them have been developed using low-power semiconductor infrared radiation sources operating in the wavelength range of 2.5–5.0 μm, fabricated on the basis of InGaAs/InAs and InAsSbP/InAs heterostructures. Experimental results are presented, demonstrating the feasibility of applying semiconductor infrared radiation sources in optical sensors for measuring the concentrations of methane (CН4) and carbon dioxide (CO2). The prospects of using such sensors in next-generation gas analysis instruments are shown.

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