Оптические сенсоры газов на основе полупроводниковых источников ИК-излучения
Various designs of optical gas sensors and gas analyzers based on them have been developed using low-power semiconductor infrared radiation sources operating in the wavelength range of 2.5–5.0 μm, fabricated on the basis of InGaAs/InAs and InAsSbP/InAs heterostructures. Experimental results are pres...
Збережено в:
| Дата: | 2008 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.4.30 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Various designs of optical gas sensors and gas analyzers based on them have been developed using low-power semiconductor infrared radiation sources operating in the wavelength range of 2.5–5.0 μm, fabricated on the basis of InGaAs/InAs and InAsSbP/InAs heterostructures. Experimental results are presented, demonstrating the feasibility of applying semiconductor infrared radiation sources in optical sensors for measuring the concentrations of methane (CН4) and carbon dioxide (CO2). The prospects of using such sensors in next-generation gas analysis instruments are shown. |
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