Buchumschlag

Вольт-фарадные характеристики ионно-имплантированных структур GaAs

A non-iterative numerical method has been proposed for calculating the dependence of the barrier capacitance of ion-implanted GaAs structures on the voltage across the Schottky barrier. The specific features of the low- and high-frequency capacitance–voltage characteristics of these structures, caus...

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Bibliographische Detailangaben
Datum:2008
Hauptverfasser: Gorev, N. B., Kodzhespirova, I. F., Privalov, E. N.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2008
Schlagworte:
ар­се­нид гал­лия
ион­но-им­план­ти­ро­ван­ная струк­ту­ра
барь­ер Шот­тки
вольт-фа­рад­ная ха­рак­те­рис­ти­ка
глу­бо­кие цен­тры за­хва­та
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.4.52
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:A non-iterative numerical method has been proposed for calculating the dependence of the barrier capacitance of ion-implanted GaAs structures on the voltage across the Schottky barrier. The specific features of the low- and high-frequency capacitance–voltage characteristics of these structures, caused by the presence of deep trapping centers, have been identified.

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