Вольт-фарадные характеристики ионно-имплантированных структур GaAs

• Date: 2008
• Main Authors: Gorev, N. B., Kodzhespirova, I. F., Privalov, E. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2008
• Subjects: ар­се­нид гал­лия; ион­но-им­план­ти­ро­ван­ная струк­ту­ра; барь­ер Шот­тки; вольт-фа­рад­ная ха­рак­те­рис­ти­ка; глу­бо­кие цен­тры за­хва­та
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.4.52
• Journal Title: Technology and design in electronic equipment

A non-iterative numerical method has been proposed for calculating the dependence of the barrier capacitance of ion-implanted GaAs structures on the voltage across the Schottky barrier. The specific features of the low- and high-frequency capacitance–voltage characteristics of these structures, caus...