Особенности формирования быстровосстанавливающихся кремниевых диодов
The dependence of the reverse recovery time (trr) on the annealing parameters of diode structures after electron irradiation with energies of 4 and 10 MeV and fluences of 6·1015 sm–2 and 8·1014 sm–2, respectively, has been investigated. Diodes with the minimum trr and maximum recovery curr...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.36 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The dependence of the reverse recovery time (trr) on the annealing parameters of diode structures after electron irradiation with energies of 4 and 10 MeV and fluences of 6·1015 sm–2 and 8·1014 sm–2, respectively, has been investigated. Diodes with the minimum trr and maximum recovery current form factor (Krr) were obtained after annealing structures irradiated with 4 MeV electrons at a fluence of 6·1015 sm–2. The trr decreases with an increase in the ratio of the concentration of recombination centers E3(0.37) to the concentration of other defects. At the same time, for silicon doped by transmutation nuclear reactions, the annealing temperature must be increased compared to Czochralski and float-zone silicon. |
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