Особенности формирования быстровосстанавливающихся кремниевых диодов

• Date: 2008
• Main Authors: Gorban, A. N., Kravchina, V. V., Gomolsky, D. M., Solodovnic, A. I.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2008
• Subjects: диод; облучение электронами; флюэнс; время восстановления; скорость эмиссии; энергия
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.36
• Journal Title: Technology and design in electronic equipment

The dependence of the reverse recovery time (trr) on the annealing parameters of diode structures after electron irradiation with energies of 4 and 10 MeV and fluences of 6·1015 sm–2 and 8·1014 sm–2, respectively, has been investigated. Diodes with the minimum trr and maximum recovery curr...