Расчет транспортных свойств детекторов гамма-излучения на основе полуизолирующих полупроводников
A method has been developed for the rapid determination of charge transport parameters in dosimetric γ-radiation detectors based on high-resistivity semiconductors. The problem of calculating charge transport parameters in planar γ-radiation detectors based on semi-insulating CdTe (CdZnTe) using the...
Gespeichert in:
| Datum: | 2008 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2008
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.41 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Zusammenfassung: | A method has been developed for the rapid determination of charge transport parameters in dosimetric γ-radiation detectors based on high-resistivity semiconductors. The problem of calculating charge transport parameters in planar γ-radiation detectors based on semi-insulating CdTe (CdZnTe) using their dosimetric characteristics has been considered. Based on the results of simulation modeling, the applicability of the proposed method has been demonstrated for HgI2 γ-radiation detectors. The proposed method can be used in the design of new spectrometric and dosimetric instruments for radiation safety monitoring and for controlling device characteristics during operation in high-radiation fields. |
|---|