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Расчет транспортных свойств детекторов гамма-излучения на основе полуизолирующих полупроводников

A method has been developed for the rapid determination of charge transport parameters in dosimetric γ-radiation detectors based on high-resistivity semiconductors. The problem of calculating charge transport parameters in planar γ-radiation detectors based on semi-insulating CdTe (CdZnTe) using the...

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Bibliographic Details
Date:2008
Main Authors: Zakharchenko, A. A., Prokhoretz, I. M., Kutny, V. E., Rybka, A. V., Khazhmuradov, M. A.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2008
Subjects:
подвижность
время жизни
полупроводниковые детекторы
полуизолирующие полупроводники
CdTe
CdZnTe
HgI2
метод Монте-Карло
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.41
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:A method has been developed for the rapid determination of charge transport parameters in dosimetric γ-radiation detectors based on high-resistivity semiconductors. The problem of calculating charge transport parameters in planar γ-radiation detectors based on semi-insulating CdTe (CdZnTe) using their dosimetric characteristics has been considered. Based on the results of simulation modeling, the applicability of the proposed method has been demonstrated for HgI2 γ-radiation detectors. The proposed method can be used in the design of new spectrometric and dosimetric instruments for radiation safety monitoring and for controlling device characteristics during operation in high-radiation fields.

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