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Спектры фоточувствительности поверхностно-барьерных структур Ni–n-GaAs

The results of a study of the photoresponse spectra of fabricated Ni–n-GaAs structures are presented in the photon energy range h=0.9–2.3 eV under illumination from the semitransparent nickel layer side. For the first time, it has been experimentally established that photons with energies of h=0.9–1...

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Bibliographische Detailangaben
Datum:2008
Hauptverfasser: Melebayew, D., Melebayewa, G. D., Rud, Yu. V., Rud, V. Yu.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2008
Schlagworte:
металл – полупроводник
фоточувствительность
фототок короткого замыкания
высота барьера Шоттки
фаулеровская область спектра
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.31
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:The results of a study of the photoresponse spectra of fabricated Ni–n-GaAs structures are presented in the photon energy range h=0.9–2.3 eV under illumination from the semitransparent nickel layer side. For the first time, it has been experimentally established that photons with energies of h=0.9–1.25 eV do not generate excited electrons in the Ni layer, and electron emission from Ni into GaAs does not occur. The potential of Ni–n-GaAs photoresponsive structures for use in solar cell development is demonstrated.

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