Спектры фоточувствительности поверхностно-барьерных структур Ni–n-GaAs
The results of a study of the photoresponse spectra of fabricated Ni–n-GaAs structures are presented in the photon energy range h=0.9–2.3 eV under illumination from the semitransparent nickel layer side. For the first time, it has been experimentally established that photons with energies of h=0.9–1...
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| Date: | 2008 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.31 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The results of a study of the photoresponse spectra of fabricated Ni–n-GaAs structures are presented in the photon energy range h=0.9–2.3 eV under illumination from the semitransparent nickel layer side. For the first time, it has been experimentally established that photons with energies of h=0.9–1.25 eV do not generate excited electrons in the Ni layer, and electron emission from Ni into GaAs does not occur. The potential of Ni–n-GaAs photoresponsive structures for use in solar cell development is demonstrated. |
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