Спектры фоточувствительности поверхностно-барьерных структур Ni–n-GaAs

• Date: 2008
• Main Authors: Melebayew, D., Melebayewa, G. D., Rud, Yu. V., Rud, V. Yu.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2008
• Subjects: металл – полупроводник; фоточувствительность; фототок короткого замыкания; высота барьера Шоттки; фаулеровская область спектра
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.31
• Journal Title: Technology and design in electronic equipment

The results of a study of the photoresponse spectra of fabricated Ni–n-GaAs structures are presented in the photon energy range h=0.9–2.3 eV under illumination from the semitransparent nickel layer side. For the first time, it has been experimentally established that photons with energies of h=0.9–1...