Получение полуизолирующего кремния для высоковольтных приборов
The influence of deposition conditions on the nucleation process, structure, and electrophysical properties of oxygen‑doped polycrystalline silicon (ODPS) films has been investigated. At an oxygen content of 2.5–22.0 at.%, ODPS exhibits a quasi‑crystalline structure. The density of ODPS across the e...
Збережено в:
| Дата: | 2008 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.35 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The influence of deposition conditions on the nucleation process, structure, and electrophysical properties of oxygen‑doped polycrystalline silicon (ODPS) films has been investigated. At an oxygen content of 2.5–22.0 at.%, ODPS exhibits a quasi‑crystalline structure. The density of ODPS across the entire studied range was found to be 2.2–2.3 g/cm³. An explanation of the obtained results is proposed based on a multi‑path deposition process in the SiH4–N2O system. The results have been applied to optimize the manufacturing processes of power electronics devices. |
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