Получение полуизолирующего кремния для высоковольтных приборов

• Date: 2008
• Main Author: Turtsevich, A. S.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2008
• Subjects: полуизолирующий кремний; структура; зародышеобразование; осаждение
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.35
• Journal Title: Technology and design in electronic equipment

The influence of deposition conditions on the nucleation process, structure, and electrophysical properties of oxygen‑doped polycrystalline silicon (ODPS) films has been investigated. At an oxygen content of 2.5–22.0 at.%, ODPS exhibits a quasi‑crystalline structure. The density of ODPS across the e...