Методы удаления дефектов, возникающих при жидкостном травлении поверхности поликристаллического кремния
A model of defect formation in the form of spots on the surface of polycrystalline silicon during the processing of semiconductor wafers in an etchant based on hydrofluoric acid is considered, as well as a model of defect removal in chemical solutions. The influence of centrifuge rotation speed duri...
Gespeichert in:
| Datum: | 2008 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2008
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.42 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Zusammenfassung: | A model of defect formation in the form of spots on the surface of polycrystalline silicon during the processing of semiconductor wafers in an etchant based on hydrofluoric acid is considered, as well as a model of defect removal in chemical solutions. The influence of centrifuge rotation speed during drying and the relief of structures created on the wafer on the number of defects has been investigated. The possibility of defect removal by chemical treatment in peroxide–ammonia solutions (PAS), or by a sequence of chemical cleaning operations in a Caro’s mixture and PAS, as well as by SiO₂ etching, has been demonstrated. |
|---|