Методы удаления дефектов, возникающих при жидкостном травлении поверхности поликристаллического кремния

A model of defect formation in the form of spots on the surface of polycrystalline silicon during the processing of semiconductor wafers in an etchant based on hydrofluoric acid is considered, as well as a model of defect removal in chemical solutions. The influence of centrifuge rotation speed duri...

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Bibliographic Details
Date:2008
Main Authors: Ivanchykou, A. E., Kisel, A. М., Medvedeva, А. V., Plebanovich, B. I.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2008
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.42
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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