Buchumschlag

Диффузия фосфора с применением твердого планарного источника в производстве интегральных схем

The results of the development and implementation of a basic phosphorus diffusion process for the formation of the active region of a power silicon transistor are presented. It is shown that the obtained optimal technological regimes of phosphorus diffusion using a solid planar source make it possib...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Datum:2008
1. Verfasser: Shangereeva, B. A.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2008
Schlagworte:
диффузия фосфора,
активная область
технологический режим
транзистор
твердый планарный источник
электрофизические характеристики
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.54
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:The results of the development and implementation of a basic phosphorus diffusion process for the formation of the active region of a power silicon transistor are presented. It is shown that the obtained optimal technological regimes of phosphorus diffusion using a solid planar source make it possible to produce transistors with improved electrophysical characteristics.

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