Диффузия фосфора с применением твердого планарного источника в производстве интегральных схем
The results of the development and implementation of a basic phosphorus diffusion process for the formation of the active region of a power silicon transistor are presented. It is shown that the obtained optimal technological regimes of phosphorus diffusion using a solid planar source make it possib...
Збережено в:
| Дата: | 2008 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.54 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The results of the development and implementation of a basic phosphorus diffusion process for the formation of the active region of a power silicon transistor are presented. It is shown that the obtained optimal technological regimes of phosphorus diffusion using a solid planar source make it possible to produce transistors with improved electrophysical characteristics. |
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