Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу

• Published in: Технологія та конструювання в електронній апаратурі
• Date: 2025
• Issue: 3–4
• Pages: 9-14
• ISSN: 3083-6549
• Author Affiliations: Volodymyr Kovalchuk — Odessa Technological University IT STEP, Ukraine — ORCID: 0000-0001-7460-8092; Diana Popryaga — South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odesа, Ukraine; Dmytro Dyachok — South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odesа, Ukraine
• Main Authors: Kovalchuk, Volodymyr, Popryaga, Diana, Dyachok, Dmytro
• Format: Article
• Language: English
• Published: PE "Politekhperiodika", Book and Journal Publishers 2025
• Subjects: гетероперехід; плівка; нанокластер; підсистема; фотоелемент
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2025.3-4.09
• Journal Title: Technology and design in electronic equipment

The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu2S film and the n-type Si substrate significantly increases the overall sensitivity of the samples under high illumination conditions. The operating mode of such an HJ as a highly sensitive valve photocell has been determined. It has also been demonstrated that these transitions are photoelectrically active in different spectral regions. The observed effects are extensive in nature, being largely determined by the geometry and morphology of the nanocluster centers rather than by the type of atoms from which they are formed.