Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу
The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu2S film and the n-type Si sub...
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Technology and design in electronic equipment| _version_ | 1868113253700206592 |
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| author | Kovalchuk, Volodymyr Popryaga, Diana Dyachok, Dmytro |
| author_facet | Kovalchuk, Volodymyr Popryaga, Diana Dyachok, Dmytro |
| author_institution_txt_mv | [
{
"author": "Volodymyr Kovalchuk",
"institution": "Odessa Technological University IT STEP, Ukraine"
},
{
"author": "Diana Popryaga",
"institution": "South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odesа, Ukraine"
},
{
"author": "Dmytro Dyachok",
"institution": "South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odesа, Ukraine"
}
] |
| author_sort | Kovalchuk, Volodymyr |
| baseUrl_str | https://www.tkea.com.ua/index.php/journal/oai |
| collection | OJS |
| datestamp_date | 2026-06-15T12:21:35Z |
| description | The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu2S film and the n-type Si substrate significantly increases the overall sensitivity of the samples under high illumination conditions. The operating mode of such an HJ as a highly sensitive valve photocell has been determined. It has also been demonstrated that these transitions are photoelectrically active in different spectral regions. The observed effects are extensive in nature, being largely determined by the geometry and morphology of the nanocluster centers rather than by the type of atoms from which they are formed. |
| doi_str_mv | 10.15222/TKEA2025.3-4.09 |
| first_indexed | 2026-02-08T08:11:14Z |
| format | Article |
| fulltext |
Teсhnology and design in electronic equipment, 2025, N 3 – 4 9ISSN 3083-6530 (Print)
ISSN 3083-6549 (Online)
1
ELECTRONIC DEVICES: RESEARCH, DEVELOPMENT
UDC 530.145 + 678.9
FILM HETEROJUNCTION WITH NANOCLUSTER
SUBSYSTEM FOR NEW TYPE OF PHOTOCELLS
The technological component of modern functional
electronics is increasingly focused on the study of
material properties at the nanoscale. The transition to
nanostructures opens new opportunities for practical
applications ranging from electronics to photonics. In
this context, quantum-sized systems attract particular
attention, with atomic nanoclusters (NC) occupying an
important place [1].
Using modern technological methods and techniques,
it is possible to form NC centers of various geometric
shapes and sizes on the surface and even within the volume
of individual crystals. The influence of NC morphology
on the mechanical, electrical, and optical properties of
the matrix in which they are formed is currently being
actively studied theoretically and experimentally [2],
[3]. NCs not only exhibit properties that distinguish
them from the corresponding macroscopic substance,
but also enable effective control of the physicochemical
characteristics of the matrix in which they are embedded.
For example, the experimentally observed red shift in
the color of the silicon crystal matrix is associated with
an increase in the size of NC centers [4]. In this case, an
analogy can be drawn with the stages of the photographic
process in alkali-halide compounds, where centers of a
latent image are formed and developed under the action
of light [5].
Therefore, from our point of view, a promising
direction is the creation of heterostructures in the form of
film heterojunctions (HJ), that incorporate NCs, forming
a nanocluster subsystem (NCS). [6].
This paper presents results from a study on the
properties of the pCu2S – nSi HJ with silicon NCs
introduced by implantation.
The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and
an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface
between the p-type Cu2S film and the n-type Si substrate significantly increases the overall sensitivity of the samples under
high illumination conditions. The operating mode of such an HJ as a highly sensitive valve photocell has been determined.
It has also been demonstrated that these transitions are photoelectrically active in different spectral regions. The observed
effects are extensive in nature, being largely determined by the geometry and morphology of the nanocluster centers rather
than by the type of atoms from which they are formed.
Keywords: heterojunction, film, nanocluster, subsystem, photocell.
Manufacturing Technology of the Heterojunction
under Study рCu2S – nSi
At the initial stage, a film-type pCu2S – nSi HJ was
fabricated. To remove the oxide film, the silicon substrate
was etched with an active solution. By means of thermal
evaporation in a vacuum (≈10–6 Torr), copper sulfide
(Cu2S) powder of the ChDA grade was deposited on the
(111) face of an n-type silicon crystal (nSi). The silicon
was doped with phosphorus atoms, and its resistivity was
0.01 Ω·cm. To create omic contacts, tin was used on the
sulfur copper side, and an alloy of silver and antimony
(20%) was used on the semiconductor side. The samples
were manufactured in two modifications according to the
surface area of the heterojunction: approximately 1 mm2
(for measuring characteristics in the valve photocell
mode) and 40 mm2.
We found that the structure of the film layer is
determined by the conditions of its deposition. When
the substrate temperature (nSi) was varied from room
temperature to 400°C, two phase transitions were clearly
observed in the Cu2S film: from α-Cu2S (orthorhombic
phase) to β-Cu2S (hexagonal or tetragonal structure). In
addition to these phase changes, the high volatility of sulfur
led to a violation of the sample’s stoichiometry, which in
turn resulted in the formation of a complex mixture of
phases. Therefore, to develop a laboratory technology
for obtaining Cu2S films, the stoichiometry of the copper
sulfide layer was studied using X-ray emission spectra of
copper in the composition of the copper-sulfur compound.
X-ray structural analysis was employed to perform
quantitative evaluation of the elements both in the bulk and
on the surface of the sample. We also used this approach
to study the composition of cluster phases within the NCS
when investigating diffusion processes and constructing
diagrams of the composition of the studied HJ.
DOI: 10.15222/TKEA2025.3-4.??
Volodymyr KOVALCHUK1, Diana POPRYAGA2, Dmytro DYACHOK2
Ukraine, Odesa, 1Odesa Technological University IT STEP;
2South Ukrainian National Pedagogical University named after K. D. Ushynsky
E-mail: lslvvvas@ukr.net
DOI: 10.15222/TKEA2025.3-4.09
Teсhnology and design in electronic equipment, 2025, N 3 – 410 ISSN 3083-6530 (Print)
ISSN 3083-6549 (Online)
2
ELECTRONIC DEVICES: RESEARCH, DEVELOPMENT
The secondary spectrum was excited by a braking
(white) primary beam of a sealed X-ray tube of the BXB-I
type with a tungsten anode (30 kV, 20 mA) with voltage
fluctuations within ΔV = 0.1 kV, on a X-ray spectrometer
using a scintillation counter (quartz crystal, oriented
to the (1011) facet). The choice of crystal for spectral
analysis was determined by the wavelength Kα for Cu.
The results of monitoring the thickness and density of
the Cu2S film during deposition indicated that the weight
concentration is proportional to the intensity of the
characteristic radiation excited in the HJ.
Calibration was performed in two ways: by comparison
with a calibration graph based on reference samples with
a known copper content in the range of 60 – 70% and by
analyzing the dependence of HJ photosensitivity on the
temperature of the silicon substrate during the growth of
the Cu2S layer. This made it possible to determine the
composition of the Cu2S film that corresponded to the
maximum photoactivity of the pCu2S – nSi HJ. It was
found that the highest photosensitivity is exhibited by
HJs in which the Cu2S films contain a slight excess of
sulfur (≈ 1.1%): that is, the Cu2S layer should contain
34.4% sulfur (the stoichiometric composition of Cu2S
corresponds to 33.3% sulfur).
Based on the results of structural studies of copper
sulfide films sulfur copper films, a technology was
developed for producing HJ with textured mosaic-type
Cu2S layers. The optimal mode for obtaining such a HJ
is as follows. A substrate with a temperature of about
300°C was placed on a mask above an evaporator with
a copper sulfide mixture and cooled to a temperature
of 150°C within 10 minutes. The transition layer of
copper sulfide was formed within an hour. The stability
of the evaporation process was ensured by the use
of an additional sulfur emitter with a temperature of
100 – 120°C, which maintained a constant partial pressure
of its vapors. Under these conditions, it was possible to
grow the Cu2S film required for the HJ. The specific
resistance of the films was 1 – 10 Ω·cm. They exhibited
a mirror-smooth surface with good adhesion to the
silicon substrate. Microscopic studies revealed a mosaic
structure with a grain size of 20 – 50 μm. It should be
noted that when Kikuchi lines appeared on the electron
micrographs of Cu2S films, the reflections from the twins
disappeared at the same time, which indicates a high
degree of perfection of the grown film.
Zone Diagram and Characteristics
of a Heterojunction рCu2S – nSi
To predict the possible properties and practical
applications of the рCu2S – nSi compound, it is advisable
to construct a band diagram to obtain additional
information about this compound. As shown in Fig. 1,
the resulting band profile is smooth, and moreover, the
valence band has practically no gap. When evaluating
the band profile of a HJ, special attention should be
paid to cases of sharp asymmetry in the doping levels of
contacting materials. The electron affinity of copper sulfide
(3.74 eV) is inherently lower than that of silicon
(4.5 eV). From the diagram, the gap values can be
obtained: in the conduction band, ΔEС ≈ 0.76 eV, and in
the valence band, ΔEV ≈ 0.
It should be noted that due to the difference in the
structures of the substrate (Si) and the Cu2S layer, there
is a high probability of forming an HJ with a high density
of mismatch defects at the interface. Such defects are
capable of localizing charge carriers around themselves,
i.e., acting as traps or recombination centers for electrons
and holes. The presence of boundary states can clearly
affect the band profile of the transition and significantly
determine its properties.
The characteristics shown in Figs. 2, 3 indicate that the
proposed HJ variant is quite promising for photoelectric
Fig. 2. Spectral dependence of the short-circuit current
of the pCu2S – nSi photovoltaic cell
(source: tungsten lamp with a color temperature of 2900 K)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0
Wavelength, μm
Sh
or
t-c
irc
ui
t c
ur
re
nt
, a
.u
.
100
80
60
40
20
0
Fig. 3. Load characteristic of the pCu2S – nSi photocell
(illumination: 5·104 lux)
0.1 0.2 0.3 0.4
Voltage, V
C
ur
re
nt
, m
A
40
30
20
10
0
Fig. 1. Zone diagram of the pCu2S – nSi compound
(the numbers correspond to energy in eV)
pCu2S nSi
3.76
0.8
0.76
0.006
4.5
1.840.17 0.3
1.1
Teсhnology and design in electronic equipment, 2025, N 3 – 4 11ISSN 3083-6530 (Print)
ISSN 3083-6549 (Online)
3
ELECTRONIC DEVICES: RESEARCH, DEVELOPMENT
applications of semiconductor heterostructures, for
example, in the manufacture of efficient photocells
based on it.
The polarity of the valve electromotive force arising
in the samples when illuminated corresponds to the
forward bias on the HJ. A wide spectral range is active:
from 0.4 to 2.0 μm (Fig. 4), which is explained by the
participation of the HJ constituent materials — copper
sulfide and silicon — in the photoelectric effect. The
operating frequency band of the pCu2S – nSi HJ under
modulated illumination is approximately 1 MHz. Thus,
as a solar converter, a pCu2S – nSi photocell with such
characteristics is capable of generating an open-circuit
voltage of 0.6 V and a short-circuit current of 40 mA/ cm2
with an efficiency of up to 4%.
It should be noted that the determined properties of the
pCu2S – nSi compound are not typical for such systems
with zone profiles containing potential breaks in the form
of teeth or pockets.
Modification of Heterojunction рCu2S – nSi
Improvements in the technology for obtaining the
above-described HJ are aimed at enhancing the quality of
these photocells. Therefore, our proposed modification of
the pCu2S – nSi HJ involves the introduction of a silicon
nanocluster subsystem at the transition boundary. We
define such a GP as pCu2S – (Si-NCS) – nSi. The NCS is
created before depositing of the copper sulfide layer by
implanting Si NCSs, i.e., forming a cluster raster of an
island structure, into the nSi substrate. Between the film
and the substrate (along the interface), a clustered film
is formed, consisting of stochastically distributed NCSs.
The manufacture of HJ from NCS involves applying
a cluster raster of colloidal dispersion to the surface of
a silicon wafer (at 100°C). This procedure was carried
out by thermal evaporation of the corresponding element
(silicon, chromium, nickel, iron, cobalt) in a vacuum
(10–5 Torr) under conditions that ensures the formation
of a colloidal layer that is clearly distinguishable using
an electron microscope (see table). The process of
introducing NCS into such a HJ is similar to that used
by us to obtain copper sulfide films. By changing the
rate of formation of NCS centers and the temperature
of the crystalline silicon (c-Si) substrate, it was possible
to implant Si-NCS into the pCu2S – nSi HJ in the form
of Si-NCS. Thus, a pCu2S – (Si-NCS) – nSi type HJ was
formed. It should be noted that transition metals (such as
Fe, Ni, Co, etc.) can also be used as implanted material
to create a similar type of HJ. We found that the results
did not change significantly even when one metal was
replaced with another. This indicates that the effects we
observed are due to the presence of NCSs, rather than
the type of atoms that form the NC.
Properties of the pCu2S – nSi Heterojunction with
a Nanocluster Subsystem
Our research on HJ samples with NCS has made it
possible to identify properties that are of practical interest
for the development of elements in modern electronic
devices.
Fig. 5 shows the voltage-ampere characteristics
(VAC) for HJ pCu2S-(Si-NCS) – nSi. At low voltage
values, the forward branch of the VAC (a) is described
by an exponential law (with a diode ideality factor
β ≈ 2.0 – 2.5). With increasing voltage, the current
increases more slowly than in HJ without NCS.
On the reverse I – V curve (b), three sections can be
distinguished: pre-breakdown (1), sharp breakdown (2),
high current (3).
Their comparison with the VAC obtained for HJ
without NCS indicates a slight increase in the currents
of the pre-breakdown region. This is explained by an
increase in the concentration of charge carriers due to
the presence of Si-NCS.
Fig. 4. I – V curves of the pCu2S – nSi at different
temperatures (°C):
1 — 150; 2 — 75; 3 — 20; 4 — minus 97; 5 — minus 195
0.1 0.2 0.3 0.4
Voltage, V
C
ur
re
nt
, m
A
10–3
10–5
10–7
1 2 3 4 5
Illustration of the layers of the Cu2S – (Si-NCS)–nSi HJ
Electron microscope photo HJ
layer
Control and formation
method
рCu2S
Thermal sublimation
of Cu2S powder in
a vacuum (10–6 Torr)
Si-NCS Vacuum evaporation
(10–5 Torr)
nSi
Crucible melting
method
Cochralsky method
Teсhnology and design in electronic equipment, 2025, N 3 – 412 ISSN 3083-6530 (Print)
ISSN 3083-6549 (Online)
4
ELECTRONIC DEVICES: RESEARCH, DEVELOPMENT
of potential barriers created by the NC system itself.
This is consistent with the collective barrier model for
a photoconductor with quasi-macroscopic inclusions of
high-resistance regions proposed by Prof. M. Sheikman [7].
The results of our study of the properties of HJ with
a metal cluster grid indicate that, on the one hand, NCS
changes the nature of the distribution of impurities and,
on the other hand, significantly increases the potential
barrier in the transition region. The mechanism for
enhancing the photocurrent arises due to the interaction
of hot photoelectrons with the electronic structure of
NC centers blocked by asymmetric potential barriers in
the HJ region.
Fig. 5. Typical direct (a) and reverse (b) I – V curves of the HJ pCu2S – (Si-NCS) – nSi
(with NCS center sizes greater than 2 nm)
0.6 1.4 2.2 3.0
Voltage, V
C
ur
re
nt
, m
A
101
10–1
10–3
10–5
a)
6 8 10 12 15 16 18
Voltage, V
C
ur
re
nt
, m
A
101
10–1
10–3
10–5
b)
1
2
3
6 8 10 12 15 16 18 20
Voltage, V
C
ur
re
nt
, m
A
101
10–1
10–3
10–5
1 2
3
Fig. 6. I – V curves of the HJ pCu2S-(Si-NCS)–nSi at different
temperatures (°C):
1 — minus 193; 2 — minus 123; 3 — minus 93
The reverse I – V curves for different temperatures
shown in Fig. 6 indicate that the breakdown voltage
decreases with decreasing temperature. This behavior of
the I – V curve is opposite to that observed in the case of a
diode without an NCS and, as is known, is characteristic
of avalanche breakdown of a p – n junction.
An analysis was performed of the capacitive
characteristics obtained for both types of HJ: with and
without NCS. These results confirm the real possibility
of generating additional charge carriers due to the
ionization of NCS centers. At reverse voltages lower than
the breakdown value, for HJ with NCS, the capacitance-
voltage dependence was described by a power law:
V ~ C –3 (Fig. 7). Extrapolation of the curve to zero
capacitance (C = 0) indicates an increase in the diffusion
potential to 1.8 V (Vd ≈ 1.8 V) compared to the non-
clustered HJ variant. This shows that the introduction of
a nanocluster grid affects the HJ profile, which becomes
more complex and, therefore, less distinct.
According to the physical model we propose, shown
in Fig. 8, the mechanism responsible for increasing the
concentration of charge carriers occurs precisely due to
the ionization of Si-NC.
It should be emphasized that, in our opinion, an
increase in the concentration of carriers in the NCS can
lead to avalanche breakdown due to the cumulative effect
–2 0 2 4 6 8 10
Voltage, V
C
ap
ac
ita
nc
e,
10
–7
F
12
8
4
0
1.8
Fig. 7. Capacitance-voltage dependence (V ~ C–3) of the HJ
p-Cu2S – (Si-NCS) – n-Si
Fig. 8. Illustration of the mechanism of charge-carrier increase
due to ionization of Si-NC centers under reverse current in the
HJ pCu2S – (Si-NCS) – nSi
Cu2S
SiNCS
Teсhnology and design in electronic equipment, 2025, N 3 – 4 13ISSN 3083-6530 (Print)
ISSN 3083-6549 (Online)
5
ELECTRONIC DEVICES: RESEARCH, DEVELOPMENT
The phenomenon described above explains the
superlinear photoelectric effect we observed in the HJ
with NCS. Such an element has increased light sensitivity
at high illumination. A schematic representation of such
a hypersensitive heterophotovoltaic element is shown
in Fig. 9.
We also investigated the lux-ampere characteristics
(LAC) for both types of HJ at a temperature of 20°C
(Fig. 10). As a result, it turned out that pCu2S – nSi
photocells always exhibit linear LAC (up to an
illuminance of approximately 5·104 lux). In photocells
with NCS, there is a sharp increase in LAC (curve 2) at
illuminance levels of 8·103 lux and above. The values
of the slope coefficients of the rectified sections of the
LAC relative to the abscissa axis allow us to distinguish
between linear (1) and superlinear (2) modes of operation
of photocells without NCS and with NCS.
Studies have shown that at low and moderate light
intensities, the main characteristics of both types of
photocells are practically the same, i.e., the NCS does not
affect the photoelectric effect under such conditions. This
can be explained by the presence of a specific Coulomb
barrier for these centers, which limits their photoelectric
activity and electron exchange interaction with the
conduction band and valence band of the semiconductor.
The linear generation mode (about 104 lux) can be
explained using the energy band diagrams of the PV cell
shown in Fig. 11. They are based on measurements of the
capacitance and I – V curves of the PV cell, as well as the
electrical and optical properties of the base regions. As
can be seen, a significant difference appears in the high
illumination region, when a mechanism is activated in
photocells with NCS that switches them to superlinear
operation mode.
We propose a switching scheme between linear
and superlinear modes, taking into account the specific
structure of the sample. At high light intensity (104 lux),
the conductivity of the Cu2S photosensitive film increases
significantly (by almost two orders of magnitude). The
Debye screening length decreases, and the nanocluster
center is solvated by mobile carriers, as illustrated in
Fig. 11. As a result, the NC centers begin to participate in
the process of electron exchange between the conduction
band and the valence band.
The specificity of HJ with NCs is that the electrons
entering the NC centers from the Cu2S film are “hot”
(Fig. 11, b). In this case, the excess energy, as in a bulk
material, is either lost or scattered at the NC centers or
upon collisions with electrons. Since the thermalization
of charge carriers is more efficient than cooling, we
obtain heating of the electron density in the NC centers.
The latter, in turn, leads to the fact that the secondary
radiation of electrons in the NC centers can exceed
the intensity of the primary exciting electron flux. In
this case, an additional current generation mechanism
begins to operate. The effect is enhanced by the fact that
the electron temperature is included in the Boltzmann
exponential factor: exp(– ΔE/kT), which determines the
probability of electron emission from the NC center.
Thanks to the introduction of NC into the base p-region
of Cu2S, a significantly higher integral sensitivity
was achieved at a high degree of sample illumination
(<< 8·103 lux) in the valve photocell mode (2.4 mA/lux)
compared to 1.8 mA/lux in the normal mode.
Fig. 9. Schematic representation of a hypersensitive HJ
pCu2S – (Si-NCS) – nSi:
1, 4 — thin removable contacts; 2 — silicon crystal; 3 — copper
sulfide film; 5 — nanocluster grid
4
3
2
Light
4
5
1
3 4
Illumination, lux
C
ur
re
nt
, m
A 4
3
1
2
Fig. 10. Lux–ampere characteristics of different types of HJs:
1 — pCu2S – nSi (linear); 2 — pCu2S – (Si-NCS) – nSi (superlinear)
Fig. 11. Energy-band diagrams of different types of the HJs:
a — pCu2S – nSi; b — pCu2S – (Si-NCS) – nSi
Cu2S
Si
Li
gh
t
a)
NCS
Cu2S
Si
Li
gh
t
b)
Teсhnology and design in electronic equipment, 2025, N 3 – 414 ISSN 3083-6530 (Print)
ISSN 3083-6549 (Online)
6
ELECTRONIC DEVICES: RESEARCH, DEVELOPMENT
DOI: 10.15222/TKEA2025.3-4.??
УДК 530.145 + 678.9
Володимир КОВАЛЬЧУК1, Діана ПОПРЯГА2, Дмитро ДЯЧОК2
Україна,Одеса, 1Одеський технологічний університет «ШАГ»
2Південноукраїнський національний педагогічний
університет ім. К. Д. Ушинського
E-mail: lslvvvas@ukr.net
ПЛІВКОВИЙ ГЕТЕРОПЕРЕХІД З НАНОКЛАСТЕРНОЮ ПІДСИСТЕМОЮ
ДЛЯ ФОТОЕЛЕМЕНТІВ НОВОГО ТИПУ
Наведено результати досліджень та описано технологію виготовлення плівкового гетеропереходу (ГП) типу
pCu₂S – nSi з нанокластерною підсистемою (НКП), що формується стохастично розподіленими нанокластерними
центрами на границі розділу. Показано, що атомарні нанокластери проявляють властивості, відмінні від макроско-
пічної речовини, та дозволяють ефективно керувати фізико-хімічними характеристиками матриці. Модифікація ГП
здійснювалася імплантацією кластерного растра острівкової структури на кремнієву підкладку перед осадженням
шару сульфіду міді, що забезпечує плавний профіль енергії переходу та відкриває можливості для створення фото-
перетворювачів.
Досліджено фотоелектричні ефекти у модифікованому ГП рCu2S – (Si-НКП) – nSi, зокрема спектральну інверсію,
суперлінійні режими роботи та незвичайну люкс-амперну залежність. Встановлено, що введення НКП у базову
p-область Cu₂S–Si значно підвищує інтегральну чутливість при високій освітленості, а геометрія та морфологія на-
нокластерних центрів відіграють вирішальну роль у формуванні властивостей ГП. Показано, що збільшення розмі-
рів НК-центрів до сотень ангстрем призводить до зникнення фотоефекту та появи інших екстенсивних ефектів.
Запропоновано конструкцію фотоелемента з двома послідовно з’єднаними p–n-переходами протилежної дії, що за-
безпечує фотоелектричну активність у різних ділянках спектра. Отримані результати вказують на перспектив-
ність використання плівкових ГП типу рCu2S – (Si-НКП) – nSi для розв’язання задач сучасної функціональної діагнос-
тики та створення нових елементів фотоелектроніки.
Ключові слова: гетероперехід, плівка, нанокластер, підсистема, фотоелемент.
Copyright: © 2025, The author(s). Licensee: Politekhperiodika, Odesa, Ukraine. This article is an open access
article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license
(https://creativecommons.org/licenses/by/4.0/).
Conclusion
Thus, studies have shown that film heterojunctions
with HCPs differ from non-clustered HCPs. The
properties of pCu2S – nSi with NCSs can be modified
by implanting a cluster grid of an island structure onto
a silicon substrate before depositing a layer of copper
sulfide.
The proposed technology for manufacturing
pCu2S – (Si-NCS) – nSi-type HJ provides a predominantly
smooth transition energy profile, which makes this
structure a promising basis for photoconverters.
The effects identified are largely determined by the
geometry and morphology of NC centers, rather than
their chemical composition. When the size of the NC
centers increases to hundreds of angstroms or more,
the photoelectric effect not only does not intensify, but,
on the contrary, disappears completely, giving way to
another effect.
Thus, a superlinear mode of operation of photocells
was discovered, in which there is an increase in sensitivity
at high illumination of the HJ.
The mechanisms presented in the work are consistent
with experimental observations and confirm the original
properties of HJ with NCS.
The study showed that HJ with NCS have significant
potential for creating new elements of modern functional
electronic devices.
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Received 12.11 2025
DOI: 10.15222/TKEA2025.3-4.09
|
| id | oai:tkea.com.ua:article-796 |
| institution | Technology and design in electronic equipment |
| keywords_txt_mv | keywords |
| language | English |
| last_indexed | 2026-06-16T01:00:30Z |
| publishDate | 2025 |
| publisher | PE "Politekhperiodika", Book and Journal Publishers |
| record_format | ojs |
| resource_txt_mv | wwwtkeacomua/ad/be9206a556a54f8f7a86fb8af28be5ad.pdf |
| spelling | oai:tkea.com.ua:article-7962026-06-15T12:21:35Z Film heterojunction with nanocluster subsystem for new type of photocells Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу Kovalchuk, Volodymyr Popryaga, Diana Dyachok, Dmytro heterojunction film nanocluster subsystem photocell гетероперехід плівка нанокластер підсистема фотоелемент The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu2S film and the n-type Si substrate significantly increases the overall sensitivity of the samples under high illumination conditions. The operating mode of such an HJ as a highly sensitive valve photocell has been determined. It has also been demonstrated that these transitions are photoelectrically active in different spectral regions. The observed effects are extensive in nature, being largely determined by the geometry and morphology of the nanocluster centers rather than by the type of atoms from which they are formed. Наведено результати досліджень та описано технологію виготовлення плівкового гетеропереходу (ГП) типу pCu2S – nSi з нанокластерною підсистемою (НКП), що формується стохастично розподіленими нанокластерними центрами на границі розділу. Показано, що атомарні нанокластери проявляють властивості, відмінні від макроскопічної речовини, та дозволяють ефективно керувати фізико-хімічними характеристиками матриці. Модифікація ГП здійснювалася імплантацією кластерного растра острівкової структури на кремнієву підкладку перед осадженням шару сульфіду міді, що забезпечує плавний профіль енергії переходу та відкриває можливості для створення фотоперетворювачів.Досліджено фотоелектричні ефекти у модифікованому ГП рCu2S – (Si-НКП) – nSi, зокрема спектральну інверсію, суперлінійні режими роботи та незвичайну люкс-амперну залежність. Встановлено, що введення НКП у базову p-область Cu2S –Si значно підвищує інтегральну чутливість при високій освітленості, а геометрія та морфологія нанокластерних центрів відіграють вирішальну роль у формуванні властивостей ГП. Показано, що збільшення розмірів НК-центрів до сотень ангстрем призводить до зникнення фотоефекту та появи інших екстенсивних ефектів.Запропоновано конструкцію фотоелемента з двома послідовно з’єднаними p–n-переходами протилежної дії, що забезпечує фотоелектричну активність у різних ділянках спектра. Отримані результати вказують на перспективність використання плівкових ГП типу рCu2S – (Si-НКП) – nSi для розв’язання задач сучасної функціональної діагностики та створення нових елементів фотоелектроніки. PE "Politekhperiodika", Book and Journal Publishers 2025-12-30 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2025.3-4.09 10.15222/TKEA2025.3-4.09 Technology and design in electronic equipment; No. 3–4 (2025): Technology and design in electronic equipment; 9-14 Технологія та конструювання в електронній апаратурі; № 3–4 (2025): Технологія та конструювання в електронній апаратурі; 9-14 3083-6549 3083-6530 10.15222/TKEA2025.3-4 en https://www.tkea.com.ua/index.php/journal/article/view/TKEA2025.3-4.09/722 Copyright (c) 2025 Volodymyr Kovalchuk, Diana Popryaga, Dmytro Dyachok http://creativecommons.org/licenses/by/4.0/ |
| spellingShingle | гетероперехід плівка нанокластер підсистема фотоелемент Kovalchuk, Volodymyr Popryaga, Diana Dyachok, Dmytro Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу |
| title | Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу |
| title_alt | Film heterojunction with nanocluster subsystem for new type of photocells |
| title_full | Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу |
| title_fullStr | Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу |
| title_full_unstemmed | Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу |
| title_short | Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу |
| title_sort | плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу |
| topic | гетероперехід плівка нанокластер підсистема фотоелемент |
| topic_facet | heterojunction film nanocluster subsystem photocell гетероперехід плівка нанокластер підсистема фотоелемент |
| url | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2025.3-4.09 |
| work_keys_str_mv | AT kovalchukvolodymyr filmheterojunctionwithnanoclustersubsystemfornewtypeofphotocells AT popryagadiana filmheterojunctionwithnanoclustersubsystemfornewtypeofphotocells AT dyachokdmytro filmheterojunctionwithnanoclustersubsystemfornewtypeofphotocells AT kovalchukvolodymyr plívkovijgeteroperehídznanoklasternoûpídsistemoûdlâfotoelementívnovogotipu AT popryagadiana plívkovijgeteroperehídznanoklasternoûpídsistemoûdlâfotoelementívnovogotipu AT dyachokdmytro plívkovijgeteroperehídznanoklasternoûpídsistemoûdlâfotoelementívnovogotipu |