Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу
The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu2S film and the n-type Si sub...
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| Date: | 2025 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2025
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2025.3-4.09 |
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| Journal Title: | Technology and design in electronic equipment |