Моделювання фотодіодної структури на основі гетеропереходу ZnO/Si
In this work, a self-powered photodetector based on a bulk ZnO/Si p–n heterojunction is numerically investigated and analyzed using the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D). The energy band diagram, electron-hole generation and recombination rates, current-voltage (J–V) chara...
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| Veröffentlicht in: | Технологія та конструювання в електронній апаратурі |
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| Datum: | 2026 |
| Heft: | 1 |
| Сторінки: | 17-31 |
| ISSN: | 3083-6549 |
| Автори та афіліації: |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2026
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2026.1.17 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | In this work, a self-powered photodetector based on a bulk ZnO/Si p–n heterojunction is numerically investigated and analyzed using the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D). The energy band diagram, electron-hole generation and recombination rates, current-voltage (J–V) characteristics, spectral photosensitivity response, and specific detectivity are examined. To optimize photodetector performance, the effects of absorber layer thickness, shallow acceptor and donor densities, and defect density were systematically studied. Various electron transport parameters of ZnO were also considered. The responsivity and specific detectivity of the simulated photodetector are 0.23 A/W and 1.1·1010 Jones, respectively. |
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| ISSN: | 3083-6549 |
| DOI: | 10.15222/TKEA2026.1.17 |