Прогнозирование напряжения отсечки ионно-имплантированных полевых транзисторов с барьером Шоттки на GaAs
It is shown that the threshold voltage of a GaAs ion-implanted metal–semiconductor field-effect transistor corresponds, with good accuracy, to the voltage at which an inflection point appears in the capacitance–voltage characteristic. A method is proposed for predicting the threshold voltage of ion-...
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| Datum: | 2007 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.6.03 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | It is shown that the threshold voltage of a GaAs ion-implanted metal–semiconductor field-effect transistor corresponds, with good accuracy, to the voltage at which an inflection point appears in the capacitance–voltage characteristic. A method is proposed for predicting the threshold voltage of ion-implanted field-effect transistors using capacitance–voltage measurements prior to contact formation.
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