Прогнозирование напряжения отсечки ионно-имплантированных полевых транзисторов с барьером Шоттки на GaAs

• Date: 2007
• Main Authors: Gorev, N. B., Kodzhespirova, I. F., Privalov, E. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: арсенид галлия; полевой транзистор; барьер Шоттки; напряжение отсечки; вольт-фарадная характеристика
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.6.03
• Journal Title: Technology and design in electronic equipment

It is shown that the threshold voltage of a GaAs ion-implanted metal–semiconductor field-effect transistor corresponds, with good accuracy, to the voltage at which an inflection point appears in the capacitance–voltage characteristic. A method is proposed for predicting the threshold voltage of ion-...