Изменение сопротивления силовых диодов под действием импульсов ударного тока

The causes of failure of semiconductor power diodes under the action of surge current pulses have been investigated. It is shown that currents below the surge level do not affect the diode resistance or reliability. When the current reaches the surge value, the diode resistance increases after each...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Datum:2007
Hauptverfasser: Pavljuk, S. P., Savitskiy, S. M., Soltys, R. B., Tishchenko, I. Yu.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2007
Schlagworte:
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.6.33
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Technology and design in electronic equipment

Institution

Technology and design in electronic equipment
Beschreibung
Zusammenfassung:The causes of failure of semiconductor power diodes under the action of surge current pulses have been investigated. It is shown that currents below the surge level do not affect the diode resistance or reliability. When the current reaches the surge value, the diode resistance increases after each repeated pulse, and after several pulses the diode fails. In this case, the forward resistance increases approximately threefold, while the temperature significantly exceeds the permissible limit. An explanation of the observed effects is proposed.