Изменение сопротивления силовых диодов под действием импульсов ударного тока

The causes of failure of semiconductor power diodes under the action of surge current pulses have been investigated. It is shown that currents below the surge level do not affect the diode resistance or reliability. When the current reaches the surge value, the diode resistance increases after each...

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Bibliographic Details
Date:2007
Main Authors: Pavljuk, S. P., Savitskiy, S. M., Soltys, R. B., Tishchenko, I. Yu.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2007
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.6.33
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The causes of failure of semiconductor power diodes under the action of surge current pulses have been investigated. It is shown that currents below the surge level do not affect the diode resistance or reliability. When the current reaches the surge value, the diode resistance increases after each repeated pulse, and after several pulses the diode fails. In this case, the forward resistance increases approximately threefold, while the temperature significantly exceeds the permissible limit. An explanation of the observed effects is proposed.