Оптимизация распределения концентрации носителей по толщине эпитаксиальных слоев

• Date: 2007
• Main Authors: Karimov, A. V., Yodgorova, D. M., Giyasova, F. A., Saidova, R. A., Haydarov, Sh. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: жидкостная эпитаксия; полупроводники AIII–BV; поршневое устройство; градиент концентрации примесей; внутренние электрические поля
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.6.57
• Journal Title: Technology and design in electronic equipment

A piston-type device for liquid-phase epitaxy of AIIIBV semiconductor compounds has been modified. The possibility of controlling the impurity concentration gradient, which creates internal electric fields in the photodetecting and active regions of semiconductor structures, is demonstrated. This c...