Тонкопленочные элементы кремниевых диодов Шоттки для высокотемпературного микромонтажа
The design and technological features of silicon Schottky diodes assembled in glass packages, as well as their electrical properties, are discussed. These devices require thermal stability of the chips up to 650 °C. It is shown that a V/n-Si Schottky barrier with a height of 0.654 V meets these tech...
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| Datum: | 2007 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.20 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The design and technological features of silicon Schottky diodes assembled in glass packages, as well as their electrical properties, are discussed. These devices require thermal stability of the chips up to 650 °C. It is shown that a V/n-Si Schottky barrier with a height of 0.654 V meets these technological requirements. The presence of vanadium disilicide in the transition layer, formed during the micro-packaging process, has been established. It is also recommended to use a double-layer passivation structure of SiO2/Ta2O5. |
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