Тонкопленочные элементы кремниевых диодов Шоттки для высокотемпературного микромонтажа

• Date: 2007
• Main Authors: Baranov, V. V., Solovyev, Ya. A., Koshkarov, G. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: барьеры Шоттки; высокотемпературный микромонтаж; электрические свойства приборов
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.20
• Journal Title: Technology and design in electronic equipment

The design and technological features of silicon Schottky diodes assembled in glass packages, as well as their electrical properties, are discussed. These devices require thermal stability of the chips up to 650 °C. It is shown that a V/n-Si Schottky barrier with a height of 0.654 V meets these tech...