Структура Те-CdTe со свойством электронного переключения с памятью

The formation of a tellurium film on the surface of a CdTe crystal under ruby laser pulse irradiation has been investigated. A method for fabricating a Te–CdTe structure with electronic switching and memory properties is also presented.

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Bibliographische Detailangaben
Datum:2007
Hauptverfasser: Baidullaeva, А., Borshch, V. V., Veleschuk, V. P., Vlasenko, O. I., Dauletmuratov, B. K., Levytskyi, S. N., Mozol', P. E.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2007
Schlagworte:
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.40
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment