Структура Те-CdTe со свойством электронного переключения с памятью

• Date: 2007
• Main Authors: Baidullaeva, А., Borshch, V. V., Veleschuk, V. P., Vlasenko, O. I., Dauletmuratov, B. K., Levytskyi, S. N., Mozol', P. E.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: CdTe; пленка теллура; переключающий элемент с памятью
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.40
• Journal Title: Technology and design in electronic equipment

The formation of a tellurium film on the surface of a CdTe crystal under ruby laser pulse irradiation has been investigated. A method for fabricating a Te–CdTe structure with electronic switching and memory properties is also presented.