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Сравнительный анализ технологий изготовления кремниевых схем считывания информации с ИК-фотодиодов

A comparative analysis of the advantages and disadvantages of two technologies for fabricating readout circuits for infrared photodiodes has been carried out: complementary MOS (CMOS) technology and charge-coupled device (CCD) technology based on n-channel MOS structures. Parameters of experimental...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Datum:2007
Hauptverfasser: Reva, V. Р., Korinetz, S. V., Pysarenko, L. A., Dukhnin, S. E., Barsukova, N. A.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2007
Schlagworte:
схема считывания
транзистор прямой инжекции
ПЗС-технология
КМОП-технология
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.46
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:A comparative analysis of the advantages and disadvantages of two technologies for fabricating readout circuits for infrared photodiodes has been carried out: complementary MOS (CMOS) technology and charge-coupled device (CCD) technology based on n-channel MOS structures. Parameters of experimental samples of integrated readout circuits (IRC) with a 2×64 format, manufactured using these technologies, are presented. The results demonstrate the feasibility of producing IRCs capable of operating at cryogenic temperatures.

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