Направленная кристаллизация силицидных пленок на кремниевой подложке
The processes of local nucleation and subsequent directed lateral crystallization of cobalt silicide phase on the surface of monocrystalline silicon have been investigated. The possibilities of creating self-organized submicron and nanoscale elements of silicon integrated circuits are considered.
Gespeichert in:
| Datum: | 2007 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2007
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.54 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Zusammenfassung: | The processes of local nucleation and subsequent directed lateral crystallization of cobalt silicide phase on the surface of monocrystalline silicon have been investigated. The possibilities of creating self-organized submicron and nanoscale elements of silicon integrated circuits are considered. |
|---|