Оптический датчик температуры на основе нанокристаллической пленки SiC
An interference temperature sensor has been developed using nanocrystalline films of cubic silicon carbide deposited directly by ion flow onto a leucosapphire substrate. The optical properties and thermal sensitivity of the “nanocrystalline SiC film/leucosapphire” structures have been measured and a...
Збережено в:
| Дата: | 2007 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.4.19 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | An interference temperature sensor has been developed using nanocrystalline films of cubic silicon carbide deposited directly by ion flow onto a leucosapphire substrate. The optical properties and thermal sensitivity of the “nanocrystalline SiC film/leucosapphire” structures have been measured and analyzed. |
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