Новые возможности фотоэлектрического метода определения высоты барьера в структурах Au–n-GaAs

• Date: 2007
• Main Authors: Melebayev, D., Melebayeva, G. D., Rud, Yu. V., Rud, V. Yu.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: структура; химический метод получения; фоточувствительность; высота барьера Шоттки; освещение; фотоэлектрический метод определения
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.33
• Journal Title: Technology and design in electronic equipment

Two-sided photosensitive Au–n–GaAs structures fabricated by a chemical method have been investigated. For the first time, it was found that illumination from the GaAs side increases photosensitivity in the Fowler region of the spectrum by approximately an order of magnitude. An improved variant of t...