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Формирование прозрачных омических контактов к р-GaN для светоизлучающих диодов

Results of studies on ohmic contacts based on Ni/Au films to the p-type GaN region are presented. The influence of Ni/Au layer thickness, deposition conditions, and contact formation regimes on specific contact resistance, element redistribution in metal–semiconductor structures, and optical propert...

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Bibliographic Details
Date:2007
Main Authors: Bosiy, V. I., Danilov, N. G., Cohan, V. P., Novitskiy, V. А., Semashko, Е. М., Tkachenko, V. V., Shponiak, T. A.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2007
Subjects:
светоизлучающий диод
омический контакт
р-область GaN
пленка Ni/Au
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.43
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:Results of studies on ohmic contacts based on Ni/Au films to the p-type GaN region are presented. The influence of Ni/Au layer thickness, deposition conditions, and contact formation regimes on specific contact resistance, element redistribution in metal–semiconductor structures, and optical properties of the contact system has been investigated. Ohmic contacts (Ni/Au)/p-GaN with a specific contact resistance of (1–2)·10⁻³ Ω·cm² and transparency of 78% at a wavelength of 460 nm have been obtained.

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