Формирование прозрачных омических контактов к р-GaN для светоизлучающих диодов
Results of studies on ohmic contacts based on Ni/Au films to the p-type GaN region are presented. The influence of Ni/Au layer thickness, deposition conditions, and contact formation regimes on specific contact resistance, element redistribution in metal–semiconductor structures, and optical propert...
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| Дата: | 2007 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.43 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Results of studies on ohmic contacts based on Ni/Au films to the p-type GaN region are presented. The influence of Ni/Au layer thickness, deposition conditions, and contact formation regimes on specific contact resistance, element redistribution in metal–semiconductor structures, and optical properties of the contact system has been investigated. Ohmic contacts (Ni/Au)/p-GaN with a specific contact resistance of (1–2)·10⁻³ Ω·cm² and transparency of 78% at a wavelength of 460 nm have been obtained. |
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