Формирование прозрачных омических контактов к р-GaN для светоизлучающих диодов

• Date: 2007
• Main Authors: Bosiy, V. I., Danilov, N. G., Cohan, V. P., Novitskiy, V. А., Semashko, Е. М., Tkachenko, V. V., Shponiak, T. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: светоизлучающий диод; омический контакт; р-область GaN; пленка Ni/Au
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.43
• Journal Title: Technology and design in electronic equipment

Results of studies on ohmic contacts based on Ni/Au films to the p-type GaN region are presented. The influence of Ni/Au layer thickness, deposition conditions, and contact formation regimes on specific contact resistance, element redistribution in metal–semiconductor structures, and optical propert...