Комбинированный способ выращивания эпитаксиальных слоев полупроводниковых соединений A³B⁵
A combined method for obtaining epitaxial layers of A3B5 semiconductor compounds is described, carried out in a single technological process by both forced cooling and isothermal mixing of solution-melts. In this process, the parameters of the grown layers are determined by the cooling regime and th...
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| Date: | 2007 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.56 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | A combined method for obtaining epitaxial layers of A3B5 semiconductor compounds is described, carried out in a single technological process by both forced cooling and isothermal mixing of solution-melts. In this process, the parameters of the grown layers are determined by the cooling regime and the rate of supply of the mixed solutions. The proposed method and device are of interest for producing semiconductor structures with a variable bandgap width in the active regions. |
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