Комбинированный способ выращивания эпитаксиальных слоев полупроводниковых соединений A³B⁵

• Datum: 2007
• Hauptverfasser: Yodgorova, D. M., Karimov, A. V., Giyasova, F. A., Saidova, R. A.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2007
• Schlagworte: устройство; способ; структура; режим; эпитаксия; гетерослой
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.56
• Назва журналу: Technology and design in electronic equipment

A combined method for obtaining epitaxial layers of A3B5 semiconductor compounds is described, carried out in a single technological process by both forced cooling and isothermal mixing of solution-melts. In this process, the parameters of the grown layers are determined by the cooling regime and th...