Диоды Ганна из GaAs с катодным контактом, инжектирующим горячие электроны
Gunn diodes made of GaAs with a cathode contact AuGe–TiB2–Au that injects hot electrons have been developed. The Gunn diodes operate in the frequency range from 17.44 to 78.0 GHz with efficiencies from 8% to 4%, respectively. Based on the Gunn diode, a generator with electronic frequency tuning in t...
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| Datum: | 2007 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.2.29 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | Gunn diodes made of GaAs with a cathode contact AuGe–TiB2–Au that injects hot electrons have been developed. The Gunn diodes operate in the frequency range from 17.44 to 78.0 GHz with efficiencies from 8% to 4%, respectively. Based on the Gunn diode, a generator with electronic frequency tuning in the range of 32.7–34.7 GHz has been designed, featuring an output power variation of less than 1.5 dB across the tuning band and under temperature changes from –50 °C to +75 °C. |
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