Свойства эпитаксиальных слоев GaAs, легированных редкоземельными элементами
An analysis has been carried out of the properties of epitaxial GaAs layers obtained from gallium melts doped with rare‑earth elements (REEs). It has been established that each REE corresponds to a certain critical concentration in the melt, above which an inversion of the conductivity type of the e...
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| Datum: | 2007 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.2.47 |
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| Назва журналу: | Technology and design in electronic equipment |